
The process of failure analysis requires the exploitation of as many physical phenomena as possible. To this end, we have seen how engineers have used the properties of electron beams, liquid crystals, and a host of other physical effects in order to analyze defective chips to improve manufacturing, storage and transportation procedures. Specifically, the scanning electron microscope or SEM involves focusing a beam of electrons onto a sample so that they scatter and form an extremely clear image at miniscule resolutions. While this is a powerful application, we can achieve more or less the same effect using a focused ion beam instead. The focused ion beam or
FIB failure analysis technique involves the usage of heavier and positively charged ions in the same setup which is used for the scanning electron microscope.
And ion is very different from an electron. For the purposes of failure analysis, we use only positively charged ions – mostly from the element gallium. However in addition to having a charge that is opposite to that of electrons, they are also far heavier since they comprise of an entire atomic nucleus with both protons and neutrons that are incomparably heavier to a mere electron. For this reason, it is more difficult to manipulate a focused ion beam compared to a beam of electrons. But with a few tweaks the same apparatus that is used for the scanning electron microscope can double up for using a focused ion beam as well.
Because focused ion beams carry far more momentum than an ordinary electron owing to their heavier weight, the secondary effect is the sputtering of atoms off the surface of the semiconductor. While this effect is not desirable in many cases, it can be useful for the purposes of failure analysis when trying to obtain an image of a cross-section of a particular layer of the chip. Because an FIB is capable of erasing individual atoms off the surface of the sample, it can also be used to prepare extremely thin slices of the specimen for Transmission Electron Microscopy or TEM for short. TEM is the name for the technology used when a focused beam of electrons is aimed at an extremely thin sample of the specimen. Instead of scattering like they do with an electron microscope, the beam passes through it instead allowing for extremely powerful resolutions.
Other applications of FIB failure analysis include the ability to coat the integrated circuit with an extremely fine layer of some substance. The focused ion beam is still a relatively new technology and failure analysis engineers are still experimenting in order to uncover the various ways they can be exploited for our purposes. Click here to learn more.